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ISPLSI2032VE Datasheet(PDF) 3 Page - Lattice Semiconductor

Part No. ISPLSI2032VE
Description  3.3V In-System Programmable High Density SuperFAST™ PLD
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Maker  LATTICE [Lattice Semiconductor]
Homepage  http://www.latticesemi.com
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 3 page
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Specifications ispLSI 2032VE
3
Absolute Maximum Ratings 1
Supply Voltage Vcc .................................. -0.5 to +5.4V
Input Voltage Applied ............................... -0.5 to +5.6V
Off-State Output Voltage Applied ............ -0.5 to +5.6V
Storage Temperature .............................. -65 to +150°C
Case Temp. with Power Applied .............. -55 to 125°C
Max. Junction Temp. (TJ) with Power Applied ... 150°C
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
C
SYMBOL
Table 2-0006/2032VE
C
PARAMETER
I/O Capacitance
6
UNITS
TYPICAL
TEST CONDITIONS
1
2
8
Dedicated Input Capacitance
pf
pf
V = 3.3V, V
= 0.0V
V = 3.3V, V = 0.0V
CC
CC
I/O
IN
C
Clock Capacitance
10
3
pf
V = 3.3V, V = 0.0V
CC
Y
TA = 0°C to + 70°C
TA = -40°C to + 85°C
SYMBOL
Table 2-0005/2032VE
VCC
VIH
VIL
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
MIN.
MAX.
UNITS
3.0
3.0
2.0
V – 0.5
3.6
3.6
5.25
0.8
V
V
V
V
SS
Commercial
Industrial
Erase Reprogram Specifications
Table 2-0008A/2032VE
PARAMETER
MINIMUM
MAXIMUM
UNITS
Erase/Reprogram Cycles
10,000
Cycles
Capacitance (T
A=25°C, f=1.0 MHz)
DC Recommended Operating Condition




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