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ISPLSI2192VE Datasheet(PDF) 3 Page - Lattice Semiconductor

Part No. ISPLSI2192VE
Description  3.3V In-System Programmable SuperFAST™ High Density PLD
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Maker  LATTICE [Lattice Semiconductor]
Homepage  http://www.latticesemi.com
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 3 page
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Specifications ispLSI 2192VE
3
Absolute Maximum Ratings 1
Supply Voltage Vcc .................................. -0.5 to +5.4V
Input Voltage Applied ............................... -0.5 to +5.6V
Off-State Output Voltage Applied ............ -0.5 to +5.6V
Storage Temperature ................................ -65 to 150°C
Case Temp. with Power Applied .............. -55 to 125°C
Max. Junction Temp. (TJ) with Power Applied ... 150°C
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
DC Recommended Operating Condition
Erase Reprogram Specifications
Capacitance (T
A=25°C, f=1.0 MHz)
C
SYMBOL
Table 2-0006/2192VE
C
PARAMETER
I/O Capacitance
8
UNITS
TYPICAL
TEST CONDITIONS
1
2
8
Dedicated Input Capacitance
pf
pf
V = 3.3V, V
= 0.0V
V = 3.3V, V = 0.0V
CC
CC
I/O
IN
C
Clock and Global Output Enable Capacitance
12
3
pf
V = 3.3V, V = 0.0V
CC
Y
Table 2-0008/2192VE
PARAMETER
MINIMUM
MAXIMUM
UNITS
Erase/Reprogram Cycles
10,000
Cycles
TA = 0°C to + 70°C
SYMBOL
Table 2-0005/2192VE
VCC
VIH
VIL
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
MIN.
MAX.
UNITS
3.0
2.0
V – 0.5
3.6
5.25
0.8
V
V
V
SS
Commercial




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