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ISPLSI3256E Datasheet(PDF) 4 Page - Lattice Semiconductor

Part No. ISPLSI3256E
Description  In-System Programmable High Density PLD
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Maker  LATTICE [Lattice Semiconductor]
Homepage  http://www.latticesemi.com
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Specifications ispLSI 3256E
4
Absolute Maximum Ratings 1
Supply Voltage Vcc ........................................................................... -0.5 to +7.0V
Input Voltage Applied ........................................................................ -2.5 to VCC +1.0V
Off-State Output Voltage Applied ..................................................... -2.5 to VCC +1.0V
Storage Temperature ........................................................................ -65 to 150°C
Case Temp. with Power Applied ...................................................... -55 to 125°C
Max. Junction Temp. (TJ) with Power Applied (304-Pin PQFP) ...... 150°C
Max. Junction Temp. (TJ) with Power Applied (320-Ball BGA) ........ 140°C
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
DC Recommended Operating Condition
Capacitance (T
A=25°C,f=1.0 MHz)
SYMBOL
Table 2-0006/3256E
C
PARAMETER
Clock Capacitance
15
UNITS
TYPICAL
TEST CONDITIONS
2
pf
V = 5.0V, V = 2.0V
CC
Y
C
I/O Capacitance
10
1
pf
V = 5.0V, V
= 2.0V
CC
I/O
Data Retention Specifications
Table 2-0008/3256E
PARAMETER
Data Retention
MINIMUM
MAXIMUM
UNITS
ispLSI Erase/Reprogram Cycles
20
10000
Years
Cycles
TA
SYMBOL
Table 2-0005/3256E
VCC
VIH
VIL
PARAMETER
Ambient Temperature
Supply Voltage
Input High Voltage
Input Low Voltage
MIN.
MAX.
UNITS
0
4.75
2.0
0
70
5.25
V
+1
0.8
°C
V
V
V
CC




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