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ISPLSI3256E Datasheet(PDF) 5 Page - Lattice Semiconductor

Part No. ISPLSI3256E
Description  In-System Programmable High Density PLD
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Maker  LATTICE [Lattice Semiconductor]
Homepage  http://www.latticesemi.com
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 5 page
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Specifications ispLSI 3256E
5
Switching Test Conditions
Input Pulse Levels
Table 2-0003/3256E
Input Rise and Fall Time
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
GND to 3.0V
≤ 3ns 10% to 90%
1.5V
1.5V
See Figure 2
3-state levels are measured 0.5V from
steady-state active level.
Output Load conditions (See Figure 2)
TEST CONDITION
R1
R2
CL
A
470Ω
390Ω
35pF
B
390Ω
35pF
470Ω
390Ω
35pF
Active High
Active Low
C
470Ω
390Ω
5pF
390Ω
5pF
Active Low to Z
at V +0.5V
OL
Active High to Z
at V
-0.5V
OH
Table 2 - 0004A
Figure 2. Test Load
+ 5V
R1
R2
CL*
Device
Output
Test
Point
*CL includes Test Fixture and Probe Capacitance.
0213A
DC Electrical Characteristics
Over Recommended Operating Conditions
VOL
SYMBOL
1. One output at a time for a maximum duration of one second. V
= 0.5V was selected to avoid test problems
by tester ground degradation. Characterized but not 100% tested.
2. Measured using sixteen 16-bit counters.
3. Typical values are at VCC = 5V and TA = 25°C.
4. Maximum ICC varies widely with specific device configuration and operating frequency. Refer to the Power Consumption
section of this datasheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to estimate
maximum ICC.
Table 2 - 0007isp/3256E
1
VOH
IIH
IIL
IIL-isp
PARAMETER
IIL-PU
IOS
2,4
ICC
Output Low Voltage
Output High Voltage
Input or I/O High Leakage Current
Input or I/O Low Leakage Current
Bscan/ispEN Input Low Leakage Current
I/O Active Pull-Up Current
Output Short Circuit Current
Operating Power Supply Current
I = 8 mA
I
= -4 mA
3.5V ≤ V ≤ V
0V ≤ V ≤ V (Max.)
0V ≤ V ≤ V
0V ≤ V ≤ V
V = 5V, V
= 0.5V
V = 0.0V, V = 3.0V
f
= 1 MHz
OL
OH
IN
IL
IN
CC
IN
IL
IN
IL
CC
OUT
TOGGLE
IL
IH
CONDITION
MIN.
TYP.
MAX.
UNITS
3
2.4
300
0.4
10
-10
-150
-150
-200
V
V
μA
μA
μA
μA
mA
mA
OUT




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