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STB3NC90Z-1 Datasheet(PDF) 1 Page - STMicroelectronics |
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STB3NC90Z-1 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 11 page 1/11 January 2001 STP3NC90Z - STP3NC90ZFP STB3NC90Z-1 N-CHANNEL 900V - 3.2 Ω - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH™III MOSFET s TYPICAL RDS(on) = 3.2Ω s EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES s 100% AVALANCHE TESTED s VERY LOW GATE INPUT RESISTANCE s GATE CHARGE MINIMIZED DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to- back Zener diodes between gate and source. Such ar- rangement gives extra ESD capability with higher rug- gedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STP3NC90Z/FP 900V < 3.5 Ω 3.5 A STB3NC90Z-1 900V < 3.5 Ω 3.5 A Symbol Parameter Value Unit STP(B)3NC90Z(-1) STP3NC90ZFP VDS Drain-source Voltage (VGS = 0) 900 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 900 V VGS Gate- source Voltage ± 25 V ID Drain Current (continuos) at TC = 25°C 3.5 3.5(*) A ID Drain Current (continuos) at TC = 100°C 2.2 2.2(*) A IDM (q) Drain Current (pulsed) 14 14 A PTOT Total Dissipation at TC = 25°C 100 35 W Derating Factor 0.8 0.28 W/°C IGS Gate-source Current (*) ±50 mA VESD(G-S) Gate source ESD(HBM-C=100pF, R=15K Ω) 2.5 KV dv/dt Peak Diode Recovery voltage slope 3 V/ns VISO Insulation Withstand Voltage (DC) -- 2000 V Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C (1)ISD ≤3.5A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (*).Limited only by maximum temperature allowed TO-220 1 2 3 TO-220FP 1 2 3 I2PAK (Tabless TO-220) |
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