STD3NK90ZFP datasheet(3/13 Pages) STMICROELECTRONICS

Part #	STD3NK90ZFP

Description	N-CHANNEL 900V - 4.1ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

DYNAMIC

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =1mA, VGS = 0

900

V

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

50

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ± 30 V

±10

µA

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID =50 µA

3

3.75

4.5

V

RDS(on)

Static Drain-source On

Resistance

VGS =10 V,ID = 1.5 A

4.1

4.8

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS =15V, ID = 1.5 A

2.7

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS =25V,f= 1MHz, VGS = 0

590

63

13

pF

Coss eq. (3)

Equivalent Output

Capacitance

VGS =0V, VDS =0 Vto 400V

34

pF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Delay Time

Rise Time

VDD =450 V, ID = 1.5 A

RG = 4.7Ω VGS =10 V

(Resistive Load see, Figure 3)

18

7

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =720V, ID =3 A,

VGS =10V

22.7

4.2

12

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(off)

tf

Turn-off Delay Time

Fall Time

VDD = 720 V, ID = 1.5 A

RG =4.7Ω VGS =10 V

(Resistive Load see, Figure 3)

45

18

ns

tr(Voff)

tf

tc

Off-voltage Rise Time

Fall Time

Cross-over Time

VDD = 450V, ID =3 A,

RG =4.7Ω, VGS = 10V

(Inductive Load see, Figure 5)

14.5

15

16

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

3

12

A

VSD (1)

Forward On Voltage

ISD = 3 A, VGS =0

1.6

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 3 A, di/dt = 100A/µs

VDD =100V, Tj =150°C

(see test circuit, Figure 5)

510

2.2

8.7

ns

µC

A

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