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STP45N10 Datasheet(PDF) 3 Page - STMicroelectronics |
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STP45N10 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 10 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD = 50 V ID = 22.5 A RG = 4.7 Ω VGS = 10 V 25 75 35 105 ns ns (di/dt)on Turn-on Current Slope VDD = 80 V ID = 45 A RG = 47 Ω VGS = 10 V 400 A/ µs Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 80 V ID =45 A VGS = 10 V 120 20 50 170 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 80 V ID = 45 A RG = 4.7 Ω VGS = 10 V 30 35 65 45 50 95 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM( •) Source-drain Current Source-drain Current (pulsed) 45 180 A A VSD ( ∗) Forward On Voltage ISD = 45 A VGS = 0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 45 A di/dt = 100 A/ µs VDD = 30 V Tj = 150 oC 200 0.14 14 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area for TO-220 Safe Operating Area for ISOWATT220 STP45N10/FI 3/10 |
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