STP4NC50 datasheet(3/9 Pages) STMICROELECTRONICS

Part #	STP4NC50

Description	N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STP4NC50/FP

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300

µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

Rise Time

VDD = 300 V, ID =2 A

RG = 4.7Ω VGS =10 V

(see test circuit, Figure 3)

10

ns

tr

13

ns

Qg

Total Gate Charge

VDD = 400V, ID =4 A,

VGS = 10V

12.5

17

nC

Qgs

Gate-Source Charge

2.7

nC

Qgd

Gate-Drain Charge

6.1

nC

Symbol

Parameter

Test Condit ions

Min.

Typ.

Max.

Unit

tr(Voff)

Off-voltage Rise Time

VDD = 400V, ID =4 A,

RG =4.7Ω, VGS = 10V

(see test circuit, Figure 5)

15

ns

tf

Fall Time

13

ns

tc

Cross-over Time

20

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

4

A

ISDM (2)

Source-drain Current (pulsed)

16

A

VSD (1)

Forward On Voltage

ISD = 4 A, VGS =0

1.6

V

trr

Reverse Recovery Time

ISD =4 A, di/dt = 100A/µs

VDD = 100V, Tj = 150°C

(see test circuit, Figure 5)

400

ns

Qrr

Reverse Recovery Charge

1.64

µC

IRRM

Reverse Recovery Current

8.2

A

Safe Operating Area for TO-220

Safe Operating Area for TO-220FP

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