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STP53N08 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP53N08 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 5 page STP53N08 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA s TYPICAL RDS(on) = 0.018 Ω s AVALANCE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100 oC s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s 175 oC OPERATING TEMPERATURE s APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM TYPE VDSS RDS(on) ID STP53N08 80 V < 0.024 Ω 53 A March 1996 1 2 3 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 80 V VDGR Drain- gate Voltage (RGS = 20 k Ω)80 V VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 oC53 A ID Drain Current (continuous) at Tc = 100 o C37 A IDM( •) Drain Current (pulsed) 212 A Ptot Total Dissipation at Tc = 25 o C 150 W Derating Factor 1 W/ oC Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC ( •) Pulse width limited by safe operating area TO-220 1/5 |
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