2 Electrical characteristics

STB13NK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z

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Table 7.

Gate-source zener diode

Table 8.

Source drain diode

(1) Limited only by maximum temperature allowed

(2) Pulse width limited by safe operating area

(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%

to 80%

(6) The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability,

but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In

this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

(7) When mounted on minimum Footprint

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Note 6

Gate-Source Breakdown

Voltage

Igs=±1mA

(Open Drain)

30

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Source-drain Current

Source-drain Current (pulsed)

10

40

A

A

Forward on Voltage

1.6

V

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

570

4.5

16

ns

µC

A