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LC4256B-75FTN256BI Datasheet(PDF) 15 Page - Lattice Semiconductor |
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LC4256B-75FTN256BI Datasheet(HTML) 15 Page - Lattice Semiconductor |
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15 / 99 page  Lattice Semiconductor ispMACH 4000V/B/C/Z Family Data Sheet 15 Absolute Maximum Ratings 1, 2, 3 ispMACH 4000C/Z ispMACH 4000B ispMACH 4000V (1.8V) (2.5V) (3.3V) Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . -0.5 to 2.5V . . . . . . . . . .-0.5 to 5.5V.. . . . . . . . . . -0.5 to 5.5V Output Supply Voltage (VCCO) . . . . . . . . . . . . . . . -0.5 to 4.5V . . . . . . . . . .-0.5 to 4.5V.. . . . . . . . . . -0.5 to 4.5V Input or I/O Tristate Voltage Applied 4, 5 . . . . . . . . . -0.5 to 5.5V . . . . . . . . . .-0.5 to 5.5V.. . . . . . . . . . -0.5 to 5.5V Storage Temperature . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C. . . . . . . . . -65 to 150°C. . . . . . . . . .-65 to 150°C Junction Temperature (Tj) with Power Applied . . . -55 to 150°C. . . . . . . . . -55 to 150°C. . . . . . . . . .-55 to 150°C 1. Stress above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 2. Compliance with Lattice Thermal Management document is required. 3. All voltages referenced to GND. 4. Undershoot of -2V and overshoot of (VIH (MAX) + 2V), up to a total pin voltage of 6.0V, is permitted for a duration of < 20ns. 5. Maximum of 64 I/Os per device with VIN > 3.6V is allowed. Recommended Operating Conditions Erase Reprogram Specifications Hot Socketing Characteristics 1,2,3 Symbol Parameter Min. Max. Units VCC Supply Voltage for 1.8V Devices ispMACH 4000C 1.65 1.95 V ispMACH 4000Z 1.7 1.9 V ispMACH 4000Z, Extended Functional Voltage Operation 1.6 1, 2 1.9 V Supply Voltage for 2.5V Devices 2.3 2.7 V Supply Voltage for 3.3V Devices 3.0 3.6 V Tj Junction Temperature (Commercial) 0 90 C Junction Temperature (Industrial) -40 105 C Junction Temperature (Extended) -40 130 C 1. Devices operating at 1.6V can expect performance degradation up to 35%. 2. Applicable for devices with 2004 date codes and later. Contact factory for ordering instructions. Parameter Min. Max. Units Erase/Reprogram Cycle 1,000 — Cycles Note: Valid over commercial temperature range. Symbol Parameter Condition Min. Typ. Max. Units IDK Input or I/O Leakage Current 0 ≤ VIN ≤ 3.0V, Tj = 105°C — ±30 ±150 µA 0 ≤ VIN ≤ 3.0V, Tj = 130°C — ±30 ±200 µA 1. Insensitive to sequence of VCC or VCCO. However, assumes monotonic rise/fall rates for VCC and VCCO, provided (VIN - VCCO) ≤ 3.6V. 2. 0 < VCC < VCC (MAX), 0 < VCCO < VCCO (MAX). 3. IDK is additive to IPU, IPD or IBH. Device defaults to pull-up until fuse circuitry is active. |
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