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STP70NF03L Datasheet(PDF) 3 Page - STMicroelectronics |
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STP70NF03L Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 9 page 3/9 STP70NF03L/STB70NF03L-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 15 V, ID = 35 A RG = 4.7Ω VGS = 4.5 V (see test circuit, Figure 3) 20 ns tr Rise Time 350 ns Qg Total Gate Charge VDD = 24 V, ID = 46A, VGS = 10V 35 45 nC Qgs Gate-Source Charge 5 nC Qgd Gate-Drain Charge 10 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) Turn-off-Delay Time VDD = 15 V, ID = 35 A, RG =4.7Ω, VGS = 4.5V (see test circuit, Figure 3) 35 ns tf Fall Time 65 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 70 A ISDM (1) Source-drain Current (pulsed) 280 A VSD (2) Forward On Voltage ISD = 70 A, VGS = 0 1.5 V trr Reverse Recovery Time ISD = 70 A, di/dt = 100A/µs, VDD = 20 V, Tj = 150°C (see test circuit, Figure 5) 75 ns Qrr Reverse Recovery Charge 110 nC IRRM Reverse Recovery Current 2.9 A Thermal Impedence Safe Operating Area |
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