FDP12N50F datasheet(3/10 Pages) FAIRCHILD

Part #	FDP12N50F

Description	N-Channel MOSFET 500V, 11.5A, 0.7廓

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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FDP12N50F / FDPF12N50FT Rev. A1

www.fairchildsemi.com

3

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

0.1

1

10

0.1

1

10

0.05

20

*Notes:

1. 250µs Pulse Test

2. TC = 25

o

C

VGS = 10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

VDS,Drain-Source Voltage[V]

30

45

67

8

1

10

150

o

C

* Notes :

1. VDS = 20V

2. 250µs Pulse Test

25

o

C

VGS,Gate-Source Voltage[V]

30

0.0

0.5

1.0

1.5

2.0

1

10

100

Notes:

1. V

GS = 0V

2. 250µs Pulse Test

150

o

C

V

SD, Body Diode Forward Voltage [V]

25

o

C

06

12

18

0.5

0.6

0.7

0.8

0.9

* Note : TJ = 25

o

C

VGS = 20V

VGS = 10V

ID, Drain Current [A]

0.1

1

10

0

500

1000

1500

2000

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

* Note:

1. VGS = 0V

2. f = 1MHz

Crss

VDS, Drain-Source Voltage [V]

30

0

4

8

12

16

20

24

0

2

4

6

8

10

* Note : ID = 11.5A

VDS = 100V

VDS = 250V

VDS = 400V

Qg, Total Gate Charge [nC]

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