tm

July 2008

©2008 Fairchild Semiconductor Corporation

FDZ1905PZ Rev.B

www.fairchildsemi.com

1

FDZ1905PZ

–20V, –3A, 123m

Ω

Features

area of 2 x 2 BGA

Ultra-thin package: less than 0.65 mm height when mounted

to PCB

High power and current handling capability

HBM ESD protection level > 4kV (Note 3)

RoHS Compliant

General Description

This device is designed specifically as a single package solution

for the battery charge switch in cellular handset and other

ultra-portable applications. It features two common drain

P-channel MOSFETs, which enables bidirectional current flow,

of the art “low pitch” WL-CSP packaging process, the

advanced WL-CSP MOSFET embodies a breakthrough in

packaging technology which enables the device to combine

excellent thermal transfer characteristics, ultra-low profile

Applications

Battery management

Load switch

Battery protection

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Source1 to Source2 Voltage

–20

V

Gate to Source Voltage

±8

V

Source1 to Source2 Current

-Continuous

(Note 1a)

–3

A

-Pulsed

–15

Power Dissipation (Steady State)

(Note 1a)

1.5

W

Power Dissipation

(Note 1b)

0.9

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Resistance, Junction to Ambient

(Note 1a)

83

°C/W

Thermal Resistance, Junction to Ambient

(Note 1b)

140

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

5

FDZ1905PZ

WL-CSP 1.0X1.5

7’’

8mm

5000 units

S1

G1

G2

S2

BOTTOM

TOP

G1

S2

S2

S1

S1

G2

PIN1