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FDP090N10 Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part # FDP090N10
Description  N-Channel PowerTrench짰 MOSFET 100V, 75A, 9m廓
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDP090N10 Datasheet(HTML) 3 Page - Fairchild Semiconductor

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FDP090N10 Rev. A
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
1
10
100
5
0.2
7
*Notes:
1. 250µs Pulse Test
2. TC = 25
o
C
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
VDS,Drain-Source Voltage[V]
500
45
67
8
10
100
2
500
25
o
C
-55
o
C
150
o
C
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
VGS,Gate-Source Voltage[V]
0.0
0.5
1.0
1.5
10
100
3
*Notes:
1. V
GS = 0V
2. 250µs Pulse Test
150
o
C
V
SD, Body Diode Forward Voltage [V]
25
o
C
500
0
100
200
300
400
0.000
0.005
0.010
0.015
0.020
*Note: TC = 25
o
C
VGS = 20V
VGS = 10V
ID, Drain Current [A]
0
20406080
100
0
2
4
6
8
10
*Note: ID = 75A
VDS = 25V
VDS = 50V
VDS = 80V
Qg, Total Gate Charge [nC]
0.1
1
10
0
1500
3000
4500
6000
7500
9000
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
VDS, Drain-Source Voltage [V]
30


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