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4N32SVM Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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4N32SVM Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 10 page ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.0 4 Electrical Characteristics (T A = 25°C Unless otherwise specified.) (Continued) Isolation Characteristics Notes: * Indicates JEDEC registered data. 1. The current transfer ratio(IC/IF) is the ratio of the detector collector current to the LED input current. 2. Pulse test: pulse width = 300µs, duty cycle ≤ 2.0% . 3. IF adjusted to IC = 2.0mA and IC = 0.7mA rms. 4. The frequency at which IC is 3dB down from the 1kHz value. 5. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common. Symbol Characteristic Test Conditions Device Min. Typ. Max. Units VISO Input-Output Isolation Voltage(5) II-O ≤ 1µA, Vrms, t = 1sec. All 7500 Vac(peak) VDC 4N32M* 2500 V VDC 4N33M* 1500 RISO Isolation Resistance(5) VI-O = 500VDC All 1011 Ω CISO Isolation Capacitance(5) VI-O = Ø, f = 1MHz All 0.8 pF |
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