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STPIC6C595M Datasheet(PDF) 3 Page - STMicroelectronics |
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STPIC6C595M Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 14 page STPIC6C595 3/14 ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. THERMAL DATA RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit VCC Logic Supply Voltage (See Note 1) 7V VI Logic Input Voltage Range -0.3 to 7 V VDS Power DMOS Drain to Source Voltage (See Note 2) 33 V IDS Continuous Source to Drain Diode Anode Current 250 mA IDS Pulsed Source to Drain Diode Anode Current (See Note 3) 500 mA ID Pulsed Drain Current, Each Output, All Output ON (TC=25°C) 250 mA ID Continuous Current, Each Output, All Output ON (TC=25°C) 100 mA ID Peak Drain Current Single Output (TC=25°C) (See Note 3) 250 mA EAS Single Pulse Avalanche Energy (See Figure11 and 12) 30 mJ IAS Avalanche Current (See Note 4 and figure 17) 200 mA Pd Continuous total dissipation (TC ≤ 25°C) 1087 mW Pd Continuous total dissipation (TC = 125°C) 217 mW TJ Operating Virtual Junction Temperature Range -40 to +150 °C TC Operating Case Temperature Range -40 to +125 °C Tstg Storage Temperature Range -65 to +150 °C TL Lead Temperature 1.6mm (1/16inch) from case for 10 seconds 260 °C Symbol Parameter Value Unit Rthj-amb Thermal Resistance Junction-ambient 115 °C/W Symbol Parameter Min. Max. Unit VCC Logic Supply Voltage 4.5 5.5 V VIH High Level Input Voltage 0.85VCC VCC V VIL Low Level Input Voltage 0 0.15VCC V IDP Pulse Drain Output Current (TC=25°C, VCC=5V,all outputs ON) (see note 3, 5 and figure 15) 250 mA tsu Set-up Time, SER IN High Before SRCK ↑ (see Figure 6 and 8) 20 ns th Hold Time, SER IN High Before G ↑ (see Figure 6, 7, 8) 20 ns tW Pulse Duration (see Figure 8) 40 ns TC Operating Case Temperature -40 125 °C |
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