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FDS6670AS Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDS6670AS Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 7 page  ©200 8 Fairchild Semiconductor Corporation FDS6670AS Rev A 2 (X) FDS6670AS 30V N-Channel PowerTrench ® SyncFET ™ General Description The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. Applications • DC/DC converter • Low side notebook Features • 13.5 A, 30 V. R DS(ON) max= 9.0 mΩ @ VGS = 10 V RDS(ON) max= 11.5 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (27nC typical) • High performance trench technology for extremely low RDS(ON) and fast switching • High power and current handling capability S D S S SO-8 D D D G 4 3 2 1 5 6 7 8 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 13.5 A – Pulsed 50 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 PD (Note 1c) 1 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6670AS FDS6670AS 13’’ 12mm 2500 units tm May 2008 • RoHS Compliant |
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