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FDS6670AS Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDS6670AS Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 7 page  FDS6670AS Rev A 2 (X) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 1 0 mA, Referenced to 25°C 27 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.7 3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 1 0 mA, Referenced to 25°C – 4 RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 13.5 A VGS = 4.5 V, ID = 11.2 A VGS=10 V, ID =13.5A, TJ=125°C 7.5 9 10 9 11.5 12.5 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A gFS Forward Transconductance VDS = 10 V, ID = 13.5 A 66 S Dynamic Characteristics Ciss Input Capacitance 1540 pF Coss Output Capacitance 440 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 160 pF Gate Resistance VGS = 15 mV, f = 1.0 MHz 2.1 Switching Characteristics (Note 2) td(on) Turn–On Delay Time 10 20 ns tr Turn–On Rise Time 5 10 ns td(off) Turn–Off Delay Time 27 44 ns tf Turn–Off Fall Time VDS = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 18 32 ns td(on) Turn–On Delay Time 13 23 ns tr Turn–On Rise Time 15 27 ns td(off) Turn–Off Delay Time 24 38 ns tf Turn–Off Fall Time VDS = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 13 23 ns Qg(TOT) Total Gate Charge at Vgs=10V 27 38 nC Qg Total Gate Charge at Vgs=5V 16 22 nC Qgs Gate–Source Charge 4.2 nC Qgd Gate–Drain Charge VDD = 15 V, ID = 13.5 A, 5.1 nC mV/ °C |
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