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FDS6670AS Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. FDS6670AS
Description  30V N-Channel PowerTrench짰 SyncFET?
Download  7 Pages
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS6670AS Datasheet(HTML) 2 Page - Fairchild Semiconductor

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FDS6670AS Rev A
2 (X)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 1 mA
30
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 1
0 mA, Referenced to 25°C
27
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
500
µA
IGSS
Gate–Body Leakage
VGS = ±20 V,
VDS = 0 V
±100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1 mA
1
1.7
3
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = 1
0 mA, Referenced to 25°C
4
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
ID = 13.5 A
VGS = 4.5 V,
ID = 11.2 A
VGS=10 V, ID =13.5A, TJ=125°C
7.5
9
10
9
11.5
12.5
m
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 5 V
50
A
gFS
Forward Transconductance
VDS = 10 V,
ID = 13.5 A
66
S
Dynamic Characteristics
Ciss
Input Capacitance
1540
pF
Coss
Output Capacitance
440
pF
Crss
Reverse Transfer Capacitance
VDS = 15 V,
V GS = 0 V,
f = 1.0 MHz
160
pF
Gate Resistance
VGS = 15 mV,
f = 1.0 MHz
2.1
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
10
20
ns
tr
Turn–On Rise Time
5
10
ns
td(off)
Turn–Off Delay Time
27
44
ns
tf
Turn–Off Fall Time
VDS = 15 V,
ID = 1 A,
VGS = 10 V,
RGEN = 6 Ω
18
32
ns
td(on)
Turn–On Delay Time
13
23
ns
tr
Turn–On Rise Time
15
27
ns
td(off)
Turn–Off Delay Time
24
38
ns
tf
Turn–Off Fall Time
VDS = 15 V,
ID = 1 A,
VGS = 4.5 V,
RGEN = 6 Ω
13
23
ns
Qg(TOT)
Total Gate Charge at Vgs=10V
27
38
nC
Qg
Total Gate Charge at Vgs=5V
16
22
nC
Qgs
Gate–Source Charge
4.2
nC
Qgd
Gate–Drain Charge
VDD = 15 V,
ID = 13.5 A,
5.1
nC
mV/
°C


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