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FDS6679AZ Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDS6679AZ Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 6 page  tm July 2008 ©2008 Fairchild Semiconductor Corporation FDS6679AZ Rev. B1 www.fairchildsemi.com 1 FDS6679AZ P-Channel PowerTrench® MOSFET -30V, -13A, 9m Ω General Description This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A Extended VGS range (-25V) for battery applications HBM ESD protection level of 6kV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handing capability RoHS Compliant S D S S SO-8 D D D G 1 7 5 2 8 4 6 3 MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage -30 V VGS Gate to Source Voltage ±25 V ID Drain Current -Continuous (Note 1a) -13 A -Pulsed -65 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1.0 TJ, TSTG Operating and Storage Temperature -55 to +150 °C RθJA Thermal Resistance , Junction to Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance , Junction to Case (Note 1) 25 °C/W Device Marking Device Reel Size Tape Width Quantity FDS6679AZ FDS6679AZ 13’’ 12mm 2500 units |
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