FQA8N80C_F109 datasheet(3/8 Pages) FAIRCHILD

Part #	FQA8N80C_F109

Description	800V N-Channel MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FQA8N80C_F109 Rev. A

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top:

15.0V

10.0V

8.0V

7.0V

6.5V

6.0V

Bottom: 5.5V

Notes :

※

1. 250µs PulseTest

2. T

C = 25℃

V

DS, Drain-Source Voltage [V]

246

8

10

-1

10

0

10

1

150

oC

25

oC

-55

oC

Notes :

※

1. V

DS = 50V

2. 250µs PulseTest

V

GS, Gate-Source Voltage [V]

0

4

8

12

16

20

1.0

1.5

2.0

2.5

3.0

V

GS = 20V

V

GS = 10V

Note: T

※

J = 25℃

I

D, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

10

-1

10

0

10

1

150℃

Notes :

※

1. V

GS = 0V

2. 250µs PulseTest

25℃

V

SD, Source-Drain voltage [V]

0

10

203040

0

2

4

6

8

10

12

V

DS = 400V

V

DS = 160V

V

DS = 640V

Note : I

※

D = 8A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

500

1000

1500

2000

2500

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

Notes :

※

1. V

GS = 0 V

2. f =1MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

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