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FDP51N25 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDP51N25 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 10 page  2 www.fairchildsemi.com FDP51N25 / FDPF51N25 Rev. B Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.68mH, IAS = 51A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 51A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDP51N25 FDP51N25 TO-220 - - 50 FDPF51N25 FDPF51N25 TO-220F - - 50 Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 250 -- -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.25 -- V/ °C IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V VDS = 200V, TC = 125°C -- -- -- -- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 25.5A -- 0.048 0.060 Ω gFS Forward Transconductance VDS = 40V, ID = 25.5A (Note 4) -- 43 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 2620 3410 pF Coss Output Capacitance -- 530 690 pF Crss Reverse Transfer Capacitance -- 63 90 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 125V, ID = 51A RG = 25Ω (Note 4, 5) -- 62 135 ns tr Turn-On Rise Time -- 465 940 ns td(off) Turn-Off Delay Time -- 98 205 ns tf Turn-Off Fall Time -- 130 270 ns Qg Total Gate Charge VDS = 200V, ID = 51A VGS = 10V (Note 4, 5) -- 55 70 nC Qgs Gate-Source Charge -- 16 -- nC Qgd Gate-Drain Charge -- 27 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 51 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 204 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 51A -- -- 1.4 V trr Reverse Recovery Time VGS = 0V, IS = 51A dIF/dt =100A/μs (Note 4) -- 178 -- ns Qrr Reverse Recovery Charge -- 4.0 -- μC |
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