FDP80N06 Rev. A

www.fairchildsemi.com

2

Electrical Characteristics

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDP80N06

FDP80N06

TO-220

-

-

50

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain to Source Breakdown Voltage

-

-

V

∆BV

DSS

/

∆T

J

Breakdown Voltage Temperature

Coefficient

-

0.075

-

Zero Gate Voltage Drain Current

-

-

1

µA

-

10

Gate to Body Leakage Current

-

-

±100

nA

Gate Threshold Voltage

--

4.0

V

Static Drain to Source On Resistance

-

8.5

10

m

Ω

Forward Transconductance

(Note 4)

-67

-

S

Input Capacitance

f = 1MHz

-

2450

3190

pF

Output Capacitance

-

910

1190

pF

Reverse Transfer Capacitance

-

145

190

pF

Turn-On Delay Time

(Note 4, 5)

-32

75

ns

Turn-On Rise Time

-

259

528

ns

Turn-Off Delay Time

-

136

282

ns

Turn-Off Fall Time

-

113

236

ns

Total Gate Charge at 10V

(Note 4, 5)

-57

74

nC

Gate to Source Gate Charge

-

15

-

nC

Gate to Drain “Miller” Charge

-

24

-

nC

Maximum Continuous Drain to Source Diode Forward Current

-

-

80

A

Maximum Pulsed Drain to Source Diode Forward Current

-

-

320

A

Drain to Source Diode Forward Voltage

-

-

1.4

V

Reverse Recovery Time

(Note 4)

-64

-

ns

Reverse Recovery Charge

-

127

-

nC

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature

4: Pulse Test: Pulse width

≤ 300µs, Duty Cycle ≤ 2%

5: Essentially Independent of Operating Temperature Typical Characteristics