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FDP8443 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FDP8443 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page FDP8443 Rev. A www.fairchildsemi.com 3 Electrical Characteristics T C = 25 oC unless otherwise noted Switching Characteristics (V GS = 10V) Drain-Source Diode Characteristics Notes: 1: Starting TJ = 25oC, L = 0.26mH, IAS = 64A. 2: Pulse width = 100s. Symbol Parameter Test Conditions Min Typ Max Units ton Turn-On Time VDD = 20V, ID = 35A VGS = 10V, RGS = 2Ω - - 58 ns td(on) Turn-On Delay Time - 18.4 - ns tr Rise Time - 17.9 - ns td(off) Turn-Off Delay Time - 55 - ns tf Fall Time - 13.5 - ns toff Turn-Off Time - - 109 ns VSD Source to Drain Diode Voltage ISD = 35A - 0.8 1.25 V ISD = 15A - 0.8 1.0 trr Reverse Recovery Time ISD = 35A, dISD/dt = 100A/μs -42 55 ns Qrr Reverse Recovery Charge - 48 62 nC This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. |
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