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FDS6574A Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part # FDS6574A
Description  20V N-Channel PowerTrench MOSFET
Download  5 Pages
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS6574A Datasheet(HTML) 4 Page - Fairchild Semiconductor

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FDS6574A Rev B2(W)
Typical Characteristics
0
1
2
3
4
5
0
15
30
45
60
75
90
Qg, GATE CHARGE (nC)
ID = 16 A
VDS = 5V
10V
15V
0
2000
4000
6000
8000
10000
0
5
10
15
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
CISS
COSS
CRSS
f = 1 MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
DC
10s
1s
100ms
100µs
RDS(ON) LIMIT
VGS = 4.5V
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
10ms
1ms
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
t1, TIME (sec)
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
RθJA(t) = r(t)*RθJA
RθJA = 125
oC/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1
t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.


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