STPS20150CFP datasheet(3/7 Pages) STMICROELECTRONICS

Part #	STPS20150CFP

Description	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STPS20150CT/CG/CR/CFP

3/7

012

34567

89

10

11

12

0

1

2

3

4

5

6

7

8

9

10

I

(A)

F(AV)

P

(W)

F(AV)

T

δ=tp/T

tp

δ = 0.05 δ

= 0.1

δ = 0.2

δ = 0.5

δ = 1

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

0

1

2

3

4

5

6

7

8

9

10

11

12

0

25

50

75

100

125

150

175

T

(°C)

amb

I

(A)

F(AV)

T

δ=tp/T

tp

R

=R

(TO-220AB, I PAK and D PAK)

th(j-a)

th(j-c)

22

R

=R

(TO-220FPAB)

th(j-a)

th(j-c)

R

=15°C/W

th(j-a)

Fig. 2: Average forward current versus ambient

temperature (

δ = 0.5, per diode).

0

0.2

0.4

0.6

0.8

1

1.2

0

25

50

75

100

125

150

T (°C)

j

P(t )

P

(25°C)

ARM p

ARM

Fig. 4: Normalized avalanche power derating

versus junction temperature.

0.001

0.01

0.1

0.01

1

0.1

10

100

1000

1

t (µs)

p

P(t )

P

(1µs)

ARM p

ARM

Fig. 3: Normalized avalanche power derating ver-

sus pulse duration.

0

25

50

75

100

125

150

1.E-03

1.E-02

1.E-01

1.E+00

t(s)

I (A)

M

IM

t

δ=0.5

TO-220AB, I PAK and D PAK

22

T =50°C

C

T =75°C

C

T =125°C

C

Fig. 5-1: Non repetitive surge peak forward cur-

rent versus overload duration (maximum values,

per diode). TO-220AB, I²PAK and D²PAK

0

10

20

30

40

50

60

70

80

90

100

1.E-03

1.E-02

1.E-01

1.E+00

t(s)

I (A)

M

IM

t

δ=0.5

TO-220FPAB

T =50°C

C

T =75°C

C

T =125°C

C

Fig. 5-2: Non repetitive surge peak forward cur-

rent versus overload duration (maximum values,

per diode). TO-220FPAB

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