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MCF51QE32CLH Datasheet(PDF) 9 Page - Freescale Semiconductor, Inc |
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MCF51QE32CLH Datasheet(HTML) 9 Page - Freescale Semiconductor, Inc |
9 / 38 page Electrical Characteristics MCF51QE128 Series Data Sheet, Rev. 7 Freescale Semiconductor 9 3 Electrical Characteristics 3.1 Introduction This section contains electrical and timing specifications for the MCF51QE128 series of microcontrollers available at the time of publication. 3.2 Parameter Classification The electrical parameters shown in this supplement are guaranteed by various methods. To give the customer a better understanding the following classification is used and the parameters are tagged accordingly in the tables where appropriate: NOTE The classification is shown in the column labeled “C” in the parameter tables where appropriate. 3.3 Absolute Maximum Ratings Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Stress beyond the limits specified in Table 4 may affect device reliability or cause permanent damage to the device. For functional operating conditions, refer to the remaining tables in this section. This device contains circuitry protecting against damage due to high static voltage or electrical fields; however, it is advised that normal precautions be taken to avoid application of any voltages higher than maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused inputs are tied to an appropriate logic voltage level (for instance, either VSS or VDD) or the programmable pull-up resistor associated with the pin is enabled. 1 SPI1 pins (SS1, MISO1, MOSI1, and SPSCK2) can be repositioned using SPI1PS in SOPT2. Default locations are PTB5, PTB4, PTB3, and PTB2. 2 IIC1 pins (SCL1 and SDA1) can be repositioned using IIC1PS in SOPT2. Default locations are PTA3 and PTA2, respectively. 3 The PTA4/ACMP1O/BKGD/MS is limited to output only for the port I/O function. Table 3. Parameter Classifications P Those parameters are guaranteed during production testing on each individual device. C Those parameters are achieved by the design characterization by measuring a statistically relevant sample size across process variations. T Those parameters are achieved by design characterization on a small sample size from typical devices under typical conditions unless otherwise noted. All values shown in the typical column are within this category. D Those parameters are derived mainly from simulations. |
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