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FSQ0170RNA Datasheet(PDF) 6 Page - Fairchild Semiconductor |
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FSQ0170RNA Datasheet(HTML) 6 Page - Fairchild Semiconductor |
6 / 17 page © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0170RNA, FSQ0270RNA, FSQ0370RNA Rev. 1.0.2 6 Electrical Characteristics (Continued) TA = 25°C unless otherwise specified. Notes: 10. These parameters, although guaranteed, are not 100% tested in production. 11. Pulse test: Pulse width ≤ 300µs, duty ≤ 2%. Symbol Parameter Condition Min. Typ. Max. Unit Burst-Mode Section VBURH Burst-Mode Voltage TJ = 25°C 0.5 0.6 0.7 V VBURL 0.3 0.4 0.5 V VBUR(HYS) 100 200 300 mV Protection Section ILIM Peak Current Limit FSQ0170RNA di/dt = 170mA/µs 0.70 0.80 0.90 A FSQ0270RNA di/dt = 200mA/µs 0.79 0.90 1.01 FSQ0370RNA di/dt = 240mA/µs 0.97 1.10 1.23 tCLD Current Limit Delay Time(10) 500 ns TSD Thermal Shutdown Temperature(10) 125 140 °C VSD Shutdown Feedback Voltage 5.5 6.0 6.5 V VOVP Over-Voltage Protection 18 19 V IDELAY Shutdown Delay Current VFB = 4V 3.5 5.0 6.5 μA tLEB Leading Edge Blanking Time(10) 200 ns Total Device Section IOP Operating Supply Current (control part only) VCC = 14V 1 3 5 mA ICH Start-Up Charging Current VCC = 0V 0.70 0.85 1.00 mA VSTR Vstr Supply Voltage VCC = 0V 24 V |
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