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STPS40L15 Datasheet(PDF) 2 Page - STMicroelectronics |
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STPS40L15 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 5 page Symbol Parameter Tests Conditions Min. Typ. Max. Unit IR * Reverse leakage current Tj = 25 °CVR = VRRM 6mA Tj = 100 °C 200 500 VF * Forward voltage drop Tj = 25 °CIF = 19 A 0.41 V Tj = 25 °CIF = 40 A 0.52 Tj = 125°C IF = 19 A 0.28 0.33 Tj = 125°C IF = 40 A 0.42 0.50 Pulse test : * tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.18 x IF(AV) + 0.008 IF 2 (RMS) STATIC ELECTRICAL CHARACTERISTICS (Per diode) Symbol Parameter Value Unit Rth(j-c) Junction to case Per diode 1.6 °C/W Total 0.85 Rth (c) Coupling 0.1 °C/W THERMAL RESISTANCES 0 2 4 6 8 1012 1416182022 0 1 2 3 4 5 6 7 8 PF(av)(W) IF(av) (A) δ = 1 δ = 0.5 δ = 0.2 δ = 0.1 δ = 0.05 T δ=tp/T tp Fig. 1: Average forward power dissipation versus average forward current (per diode). 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20 22 Tamb(°C) IF(av)(A) Rth(j-a)=15°C/W Rth(j-a)=Rth(j-c) T δ=tp/T tp Fig. 2: Average forward current versus ambient temperature ( δ=1, per diode). STPS40L15CW/CT 2/5 |
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