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STPS5L25B-1 Datasheet(PDF) 3 Page - STMicroelectronics |
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STPS5L25B-1 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 5 page 1E-3 1E-2 1E-1 1E+0 0 20 40 60 80 100 IM(A) Tc=25°C Tc=100°C Tc=75°C t(s) IM t δ=0.5 Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values). 1.0E-4 1.0E-3 1.0E-2 1.0E-1 1.0E+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) Zth(j-c)/Rth(j-c) δ = 0.1 δ = 0.2 δ = 0.5 Single pulse T δ=tp/T tp Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. 0 5 10 15 20 25 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 3E+2 IR(mA) Tj=125°C Tj=25°C Tj=150°C VR(V) Fig. 5: Reverse leakage current versus reverse voltage applied (typical values). 12 5 10 20 30 100 200 500 1000 2000 VR(V) C(pF) F=1MHz Tj=25°C Fig. 6: Junction capacitance versus reverse voltage applied (typical values). IFM(A) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1.0 10.0 100.0 VFM(V) Typical values Tj=150°C Tj=125°C Tj=25°C Fig. 7: Forward voltage drop versus forward cur- rent (maximum values). 0 2 4 6 8 1012 14 1618 20 0 20 40 60 80 100 S(Cu) (cm²) Rth(j-a) (°C/W) Fig. 8: Thermal resistance junction to ambient ver- sus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm). STPS5L25B/B-1 3/5 |
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Similar Description - STPS5L25B-1 |
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