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2SK1762 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SK1762 Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1762 Rev.2.00 Sep 07, 2005 page 4 of 6 Case Temperature TC (°C) Static Drain to Source on State Resistance vs. Temperature Drain Current ID (A) Forward Transfer Admittance vs. Drain Current Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current ID (A) Switching Characteristics – 40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1.0 2 A 5 A Pulse Test VGS = 10 V ID = 10 A Tc = –25 °C 25 °C 75 °C VDS = 10 V Pulse Test 0.1 0.2 0.5 1 2 5 10 0.5 1 2 5 10 20 50 0.2 0.5 12 5 10 20 5 10 200 100 500 50 di / dt = 100 A / µs VGS = 0, Ta = 25°C 20 010 20 30 40 50 10 100 1000 10000 VGS = 0 f = 1 MHz Ciss Coss Crss 0 8 16 24 32 40 0 100 200 300 400 500 100 V 50 V VGS VDS VDD = 200 V ID = 12 A VDD = 200 V 100 V 50 V 20 16 12 8 4 0 0.1 0.2 0.5 1 2 5 10 5 10 20 50 100 200 500 VGS = 10 V, VDD = 30 V PW = 2 µs, duty ≤ 1 % . . td (off) tf td (on) tr |
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