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2SK1934 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SK1934 Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1934 Rev.2.00 Sep 07, 2005 page 4 of 6 Case Temperature TC (°C) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Dynamic Input Characteristics Gate Charge Qg (nc) Switching Characteristics Drain Current ID (A) 5 4 3 2 1 –40 0 40 80 120 160 Pulse Test I = 5 A D 0 2 A 1 A 50 20 10 5 2 1 0.5 0.1 0.2 0.5 1 5 10 2 Tc = 25 °C –25 °C Pulse Test V = 20 V DS 75 °C 0.2 0.5 1 2 5 10 20 100 200 500 1000 2000 5000 di/dt = 100 A/ s, V = 0 Ta = 25 °C µ GS 50 10000 1000 100 10 0 10 20 30 40 50 Ciss Coss Crss V = 0 V f = 1 MHz GS 1000 800 600 400 200 0 40 80 120 160 200 20 16 12 8 4 0 V = 250 V 400 V 600 V DD 400 V 600 V V = 250 V DD V I = 8 A GS D VDS 0.1 0.2 0.5 1 2 5 10 5 10 20 50 100 200 500 f t t r td(off) td(on) VGS = 10 V, VDD = 30 V PW = 5 µs, duty ≤ 1 % |
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