2SK2570ZL-TL-E datasheet(2/7 Pages) RENESAS

Part #	2SK2570ZL-TL-E

Description	Silicon N Channel MOS FET Low Frequency Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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2SK2570

Rev.2.00 Sep 07, 2005 page 2 of 6

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

20

V

Gate to source voltage

VGSS

±10

V

Drain current

ID

0.2

A

Drain peak current

ID(pulse)*

1

0.4

A

Channel dissipation

Pch

150

mW

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. PW

≤ 10 µs, duty cycle ≤ 1 %

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

20

—

V

ID = 10

µA, VGS = 0

Gate to source breakdown voltage

V(BR)GSS

±10

—

V

IG = ±100

µA, VDS = 0

Zero gate voltage drain current

IDSS

—

1.0

µA

VDS = 20 V, VGS = 0

Gate to source leak current

IGSS

—

±5.0

µA

VGS =

±6.5 V, VDS = 0

Gate to source cutoff voltage

VGS(off)

0.5

—

1.5

V

ID = 10

µA, VDS = 5 V

—

0.8

1.1

Ω

ID = 100 mA, VGS = 4 V *

2

Static drain to source on state

resistance

RDS(on)

—

1.3

2.2

Ω

ID = 40 mA, VGS = 2.5 V *

2

Forward transfer admittance

|yfs|

0.22

0.35

—

S

ID = 100 mA, VDS = 10 V *

2

Input capacitance

Ciss

—

45

—

pF

Output capacitance

Coss

—

33

—

pF

Reverse transfer capacitance

Crss

—

9.6

—

pF

VDS = 10 V, VGS = 0,

f = 1 MHz

Turn-on delay time

td(on)

—

20

—

ns

Rise time

tr

—

60

—

ns

Turn-off delay time

td(off)

—

240

—

ns

Fall time

tf

—

140

—

ns

VGS = 5 V, ID = 100 mA,

RL = 100

Ω

Notes: 2. Pulse test

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