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2SK2926S Datasheet(PDF) 2 Page - Renesas Technology Corp |
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2SK2926S Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 9 page 2SK2926(L), 2SK2926(S) Rev.2.00 Sep 07, 2005 page 2 of 8 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 15 A Drain peak current ID(pulse)* 1 60 A Body to drain diode reverse drain current IDR 15 A Avalanche current IAP* 3 15 A Avalanche energy EAR* 3 19 mJ Channel dissipation Pch* 2 25 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25 °C 3. Value at Ta = 25 °C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Zero gate voltage drain current IDSS — — 10 µA VDS = 60 V, VGS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Gate to source cutoff voltage VGS(off) 1.5 — 2.5 V ID = 1 mA, VDS = 10 V RDS(on) — 0.042 0.055 Ω ID = 8 A, VGS = 10 V* 4 Static drain to source on state resistance RDS(on) — 0.065 0.11 Ω ID = 8 A, VGS = 4 V* 4 Forward transfer admittance |yfs| 7 11 — S ID = 8 A, VDS = 10 V* 4 Input capacitance Ciss — 500 — pF Output capacitance Coss — 260 — pF Reverse transfer capacitance Crss — 110 — pF VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time td(on) — 10 — ns Rise time tr — 80 — ns Turn-off delay time td(off) — 100 — ns Fall time tf — 110 — ns VGS = 10 V, ID = 8 A, RL = 3.75 Ω Body to drain diode forward voltage VDF — 1.0 — V IF = 15 A, VGS = 0 Body to drain diode reverse recovery time trr — 55 — ns IF = 15 A, VGS = 0, diF/ dt = 50 A/ µs Note: 4. Pulse test |
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