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2SK2931-E Datasheet(PDF) 4 Page - Renesas Technology Corp

Part No. 2SK2931-E
Description  Silicon N Channel MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK2931-E Datasheet(HTML) 4 Page - Renesas Technology Corp

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2SK2931
Rev.5.00 Sep 07, 2005 page 4 of 7
Case Temperature TC (°C)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Switching Characteristics
Drain Current ID (A)
40
32
24
16
8
–40
0
40
80
120
160
0
VGS = 4 V
10 V
5, 10, 20 A
0.1
0.3
1
3
10
30
100
500
100
200
20
50
10
2
5
1
0.5
25
°C
Tc = –25
°C
75
°C
Pulse Test
VDS = 10 V
Pulse Test
ID = 20 A
10 A
5 A
0.1
0.3
1
3
10
30
100
010
20
30
40
50
10000
2000
5000
1000
100
200
500
100
80
60
40
20
0
20
16
12
8
4
40
80
120
160
200
0
0.1 0.2
1
2
10 20
100
ID = 45 A
VGS
VDS
VDD = 50 V
25 V
10 V
100
20
50
10
di / dt = 50 A /
µs
VGS = 0, Ta = 25°C
50
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
VDD = 10 V
25 V
50 V
1000
200
500
100
20
10
50
0.5
5
50
VGS = 10 V, VDD = 30 V
PW = 10
µs, duty < 1 %
tf
tr
td(on)
td(off)


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