Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.NET

X  

Preview PDF Download HTML

2SK2931-E Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. 2SK2931-E
Description  Silicon N Channel MOS FET High Speed Power Switching
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK2931-E Datasheet(HTML) 2 Page - Renesas Technology Corp

  2SK2931-E Datasheet HTML 1Page - Renesas Technology Corp 2SK2931-E Datasheet HTML 2Page - Renesas Technology Corp 2SK2931-E Datasheet HTML 3Page - Renesas Technology Corp 2SK2931-E Datasheet HTML 4Page - Renesas Technology Corp 2SK2931-E Datasheet HTML 5Page - Renesas Technology Corp 2SK2931-E Datasheet HTML 6Page - Renesas Technology Corp 2SK2931-E Datasheet HTML 7Page - Renesas Technology Corp 2SK2931-E Datasheet HTML 8Page - Renesas Technology Corp  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
2SK2931
Rev.5.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
45
A
Drain peak current
ID(pulse)
Note1
180
A
Body-drain diode reverse drain current
IDR
45
A
Avalanche current
IAP
Note3
45
A
Avalanche energy
EAR
Note3
173
mJ
Channel dissipation
Pch
Note2
75
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg
≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
60
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
V
IG =
±100 µA, VDS = 0
Gate to source leak current
IGSS
±10
µA
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
10
µA
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.5
2.5
V
ID = 1 mA, VDS = 10 V
RDS(on)
0.010
0.013
ID = 20 A, VGS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
0.015
0.025
ID = 20 A, VGS = 4 V
Note4
Forward transfer admittance
|yfs|
24
40
S
ID = 20 A, VDS = 10 V
Note4
Input capacitance
Ciss
2200
pF
Output capacitance
Coss
1050
pF
Reverse transfer capacitance
Crss
320
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
25
ns
Rise time
tr
200
ns
Turn-off delay time
td(off)
320
ns
Fall time
tf
240
ns
ID = 20 A, VGS = 10 V,
RL = 1.5
Body–drain diode forward voltage
VDF
0.95
V
IF = 45 A, VGS = 0
Body–drain diode reverse
recovery time
trr
60
ns
IF = 45 A, VGS = 0
diF/ dt = 50 A/
µs
Note:
4. Pulse test


Similar Part No. - 2SK2931-E

ManufacturerPart No.DatasheetDescription
Hitachi Semiconductor
Hitachi Semiconductor
2SK2931 HITACHI-2SK2931 Datasheet
52Kb / 10P
   Silicon N Channel MOS FET High Speed Power Switching
VBsemi Electronics Co.,Ltd
VBsemi Electronics Co.,...
2SK2931 VBSEMI-2SK2931 Datasheet
1Mb / 7P
   N-Channel 60-V (D-S) MOSFET
Inchange Semiconductor Company Limited
Inchange Semiconductor ...
2SK2931 ISC-2SK2931 Datasheet
333Kb / 2P
   isc N-Channel MOSFET Transistor
More results

Similar Description - 2SK2931-E

ManufacturerPart No.DatasheetDescription
Renesas Technology Corp
Renesas Technology Corp
H5N1503P RENESAS-H5N1503P Datasheet
81Kb / 7P
   Silicon N Channel MOS FET High Speed Power Switching
H7N0608LD RENESAS-H7N0608LD Datasheet
118Kb / 12P
   Silicon N Channel MOS FET High Speed Power Switching
Hitachi Semiconductor
Hitachi Semiconductor
2SK2938 HITACHI-2SK2938 Datasheet
55Kb / 10P
   Silicon N Channel MOS FET, High Speed Power Switching
2SK2957 HITACHI-2SK2957 Datasheet
50Kb / 9P
   Silicon N Channel MOS FET High Speed Power Switching
2SK2978 HITACHI-2SK2978 Datasheet
45Kb / 8P
   Silicon N Channel MOS FET High Speed Power Switching
2SK3070 HITACHI-2SK3070 Datasheet
54Kb / 10P
   Silicon N Channel MOS FET High Speed Power Switching
2SK3134 HITACHI-2SK3134 Datasheet
54Kb / 10P
   Silicon N Channel MOS FET High Speed Power Switching
2SK3136 HITACHI-2SK3136 Datasheet
52Kb / 10P
   Silicon N Channel MOS FET High Speed Power Switching
2SK3159 HITACHI-2SK3159 Datasheet
27Kb / 4P
   Silicon N Channel MOS FET High Speed Power Switching
2SK3207 HITACHI-2SK3207 Datasheet
27Kb / 5P
   Silicon N Channel MOS FET High Speed Power Switching
2SK3209 HITACHI-2SK3209 Datasheet
26Kb / 4P
   Silicon N Channel MOS FET High Speed Power Switching
More results


Html Pages

1  2  3  4  5  6  7  8 


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz