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2SK2931-E Datasheet(PDF) 3 Page - Renesas Technology Corp

Part No. 2SK2931-E
Description  Silicon N Channel MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK2931-E Datasheet(HTML) 3 Page - Renesas Technology Corp

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2SK2931
Rev.5.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Power vs. Temperature Derating
Case Temperature TC (°C)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Drain Current
100
75
50
25
0
50
100
150
200
50
40
30
20
10
0
10 V
24
6
8
10
6 V
50
40
30
20
10
0
12
34
5
VDS = 10 V
Pulse Test
0.1
0.3
1
3
10
30
100
1000
300
100
30
10
3
1
0.3
0.1
DC
Operation
(Tc
=
25
°C)
Ta = 25
°C
10
µs
100
µs
1 ms
PW
=
10
ms
(1shot)
Operation in
this area is
limited by RDS(on)
3.5 V
4 V
5 V
3 V
VGS = 2.5 V
Pulse Test
Tc = 75
°C
25
°C
–25
°C
0.5
0.4
0.3
0.2
0.1
0
48
12
16
20
Pulse Test
ID = 20 A
10 A
5 A
1
5
20
100
210
50
100
20
1
5
2
10
50
VGS = 4 V
10 V
Pulse Test


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