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2SK2932 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # 2SK2932
Description  Silicon N Channel MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK2932 Datasheet(HTML) 4 Page - Renesas Technology Corp

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2SK2932
Rev.4.00 Sep 07, 2005 page 4 of 7
Case Temperature TC (°C)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Switching Characteristics
Drain Current ID (A)
0.5
0.4
0.3
0.2
0.1
–40
0
40
80
120
160
0
0.1 0.2
1
5
20
20
2
5
1
0.5
0.5
2
Pulse Test
10
10
VDS = 10 V
Pulse Test
25
°C
Tc = –25
°C
75
°C
ID = 10 A
VGS = 4 V
10 V
5 A
10 A
2 A
2, 5 A
0.1
0.5
1
2
10
0.2
5
010
20
30
40
50
1000
200
500
100
10
20
50
100
80
60
40
20
0
20
16
12
8
4
4
8
12
16
20
0
1000
300
100
30
10
0.1
0.2
1
5
10
VDD = 50 V
25 V
10 V
500
200
100
20
50
10
5
ID = 10 A
VGS
VDS
3
1
0.5
2
20
20
di / dt = 50 A /
µs
VGS = 0, Ta = 25°C
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
VDD = 50 V
25 V
10 V
tr
VGS = 10 V, VDD = 30 V
PW = 5
µs, duty < 1 %
tf
td(on)
td(off)


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