2SK2932 datasheet(5/8 Pages) RENESAS | Silicon N Channel MOS FET High Speed Power Switching

Part No.	2SK2932

Description	Silicon N Channel MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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2SK2932

Rev.4.00 Sep 07, 2005 page 5 of 7

Pulse Width

PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width

Channel Temperature Tch (

°C)

Maximum Avalanche Energy vs.

Channel Temperature Derating

Source to Drain Voltage

VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

D. U. T

Rg

IAP

Monitor

VDS

Monitor

VDD

50

Ω

Vin

15 V

0

ID

VDS

IAP

V(BR)DSS

L

VDD

EAR =

• L • I

AP

2

•

2

1

VDSS

VDSS – VDD

Avalanche Test Circuit

Avalanche Waveform

0

0.4

0.8

1.2

1.6

2.0

25

50

75

100

125

150

0

VGS = 0, –5 V

10 V

5 V

20

16

12

8

4

IAP = 10 A

VDD = 25 V

duty < 0.1 %

Rg > 50

Ω

Pulse Test

10

8

6

4

2

3

1

0.3

0.1

0.03

0.01

10

µ

100

µ

1 m

10 m

100 m

1

10

DM

P

PW

T

D =

PW

T

ch – c(t) = s (t)

• ch – c

ch – c = 6.25

°C/W, Tc = 25°C

θ

γ

θ

Tc = 25

°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot

pulse

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2SK2932 Datasheet(PDF) 5 Page - Renesas Technology Corp

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