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2SK2932 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part No. 2SK2932
Description  Silicon N Channel MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK2932 Datasheet(HTML) 3 Page - Renesas Technology Corp

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2SK2932
Rev.4.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Power vs. Temperature Derating
Case Temperature TC (°C)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Drain Current
40
30
20
10
0
50
100
150
200
1000
300
100
30
3
10
0.1
0.3
1
3
10
30
100
20
16
12
8
4
0
2
468
10
20
16
12
8
4
0
24
68
10
0.3
0.1
1
Ta = 25
°C
10 V
Operation in
this area is
limited by RDS(on)
6 V
5 V
4 V
3 V
VGS = 2.5 V
Pulse Test
Tc = –25
°C
25
°C
VDS = 10 V
Pulse Test
75
°C
10
µs
1 ms
100
µs
PW
=
10
ms
(1shot)
DC
Opera
tion
(Tc
=
25
°C)
2.0
1.6
1.2
0.8
0.4
0
48
12
16
20
5
20
100
110
50
2
1.0
0.2
0.5
0.1
0.02
0.01
0.05
Pulse Test
5 A
ID = 10 A
2 A
VGS = 4 V
Pulse Test
10 V


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