2SK3418 datasheet(2/8 Pages) RENESAS

Part #	2SK3418

Description	Silicon N Channel MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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2SK3418

Rev.2.00 Sep. 10, 2004 page 2 of 7

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown voltage

V(BR)DSS

60

—

V

ID = 10 mA, VGS = 0

Zero gate voltage drain current

IDSS

——

10

µAVDS = 60 V, VGS = 0

Gate to source leak current

IGSS

——

±0.1

µAVGS = ±20 V, VDS = 0

Gate to source cutoff voltage

VGS(off)

1.0

—

2.5

V

VDS = 10 V, ID = 1 mA

Note1

Forward transfer admittance

|yfs|55

90

—

S

ID = 45 A, VDS = 10 V

Note1

RDS(on)

—4.3

5.5

m

Ω

ID = 45 A, VGS= 10 V

Note1

Static drain to source on state

resistance

RDS(on)

—6.0

9.0

m

Ω

ID = 45 A, VGS=4 V

Note1

Input capacitance

Ciss

—

9770

—

pF

Output capacitance

Coss

—

1340

—

pF

Reverse transfer capacitance

Crss

—

470

—

pF

VDS = 10 V

VGS = 0

f = 1 MHz

Total gate charge

Qg

—

180

—

nC

Gate to source charge

Qgs

—

32

—

nC

Gate to drain charge

Qgd

—

36

—

nC

VDD = 50 V

VGS = 10 V

ID = 85 A

Turn-on delay time

td(on)

—53—

ns

Rise time

tr

—

320

—

ns

Turn-off delay time

td(off)

—

700

—

ns

Fall time

tf

—

380

—

ns

VGS = 10 V

ID= 45 A

RL = 0.67

Ω

Body-drain diode forward voltage

VDF

—1.0

—

V

IF = 85 A, VGS = 0

Body-drain diode reverse recovery

time

trr

—70—

ns

IF = 85 A, VGS = 0

diF / dt = 50 A /

µs

Note:

1. Pulse test

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