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2SK3418-E Datasheet(PDF) 3 Page - Renesas Technology Corp |
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2SK3418-E Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 8 page 2SK3418 Rev.2.00 Sep. 10, 2004 page 3 of 7 Main Characteristics 160 120 80 0 50 100 150 200 0.1 0.3 1 3 10 30 100 100 80 60 40 20 0 2 468 10 1000 300 100 30 10 1 0.3 0.1 3 Ta = 25 °C 10 µs 100 µs 1 ms DC Operat ion (Tc = 25 °C ) PW = 10ms (1 shot) 3 V 40 5 V 4 V 2.5 V 100 80 60 40 20 0 12 34 5 Tc = – 25 °C 25 °C 75 °C V = 10 V Pulse Test DS Pulse Test V = 10 V GS Case Temperature Tc ( °C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Maximum Safe Operation Area Gate to Source Voltage VGS (V) Typical Transfer Characteristics Drain to Source Voltage VDS (V) Typical Output Characteristics 0 48 12 16 20 0.5 0.4 0.3 0.2 0.1 Pulse Test I = 50 A D 20 A 10 A 1 30 100 3 100 0.3 1 0.1 10 1000 10 3 30 300 V = 4 V GS 10 V Pulse Test Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Operation in this area is limited by RDS(on) |
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