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STB141NF55 Datasheet(PDF) 5 Page - STMicroelectronics |
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STB141NF55 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 15 page  STB141NF55 - STB141NF55-1 - STP141NF55 Electrical characteristics 5/15 Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD = 27.5 V, ID = 40A RG =4.7Ω , VGS = 10V (see Figure 13) 30 150 ns ns td(off) tf Turn-off-delay time Fall time VDD = 27.5V, ID = 40A, RG =4.7Ω, VGS = 10V (see Figure 13) 125 45 ns ns Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited safe operating area Source-drain current Source-drain current (pulsed) 80 320 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 80A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80A, di/dt = 100 A/µs, VDD = 20V, Tj = 150°C (see Figure 15) 90 275 6.5 ns nC A |
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