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July 2001

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STS4NF100

N-CHANNEL 100V - 0.065

Ω - 4A SO-8

STripFET™ II POWER MOSFET

s

s

EXCEPTIONAL dv/dt CAPABILITY

s

100 % AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

UPS AND MOTOR CONTROL

TYPE

STS4NF100

100 V

<0.070

Ω

4 A

SO-8

ABSOLUTE MAXIMUM RATINGS

(

Symbol

Parameter

Value

Unit

100

V

100

V

Gate- source Voltage

± 20

V

4

2.5

A

A

Drain Current (pulsed)

16

A

2.5

W

INTERNAL SCHEMATIC DIAGRAM