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STS4NF100 Datasheet(PDF) 1 Page - STMicroelectronics |
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STS4NF100 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 8 page 1/8 July 2001 . STS4NF100 N-CHANNEL 100V - 0.065 Ω - 4A SO-8 STripFET™ II POWER MOSFET s TYPICAL RDS(on) = 0.065 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100 % AVALANCHE TESTED s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL TYPE VDSS RDS(on) ID STS4NF100 100 V <0.070 Ω 4 A SO-8 ABSOLUTE MAXIMUM RATINGS ( •) Pulse width limited by safe operating area. Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 100 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C 4 2.5 A A IDM(•) Drain Current (pulsed) 16 A Ptot Total Dissipation at TC = 25°C 2.5 W INTERNAL SCHEMATIC DIAGRAM |
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