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STS4NF100 Datasheet(PDF) 2 Page - STMicroelectronics |
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STS4NF100 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 8 page STS4NF100 2/8 THERMAL DATA (*) Mounted on FR-4 board (t [ 10 sec.) ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF ON (*) DYNAMIC Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient Single Operatio Thermal Operating Junction-ambient Storage Temperature 50 -55 to 150 -55 to 150 °C/W °C °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 100 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C 1 10 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 23 4 V RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 2 A 0.065 0.070 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (*) Forward Transconductance VDS>ID(on)xRDS(on)max ID =2 A 10 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 870 125 52 pF pF pF |
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Similar Description - STS4NF100 |
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