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STS4NF100 Datasheet(PDF) 3 Page - STMicroelectronics |
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STS4NF100 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 8 page 3/8 STS4NF100 SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ( •)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 50 V ID = 4 A RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 3) 58 45 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 80V ID= 4A VGS=10V 30 6 10 41 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 50 V ID = 4 A RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 3) 49 17 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 4 16 A A VSD (*) Forward On Voltage ISD = 4 A VGS = 0 1.2 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4 A di/dt = 100A/µs VDD = 30 V Tj = 150°C (see test circuit, Figure 5) 100 375 7.5 ns nC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area Thermal Impedance |
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Similar Description - STS4NF100 |
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