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STB160N75F3 Datasheet(PDF) 5 Page - STMicroelectronics |
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STB160N75F3 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 16 page  STB160N75F3 - STP160N75F3 - STW160N75F3 Electrical characteristics 5/16 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD=37.5 V, ID= 60A, RG=4.7Ω, VGS=10V, (see Figure 18) 22 65 100 15 ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse with limited by safe operating area Source-drain current Source-drain current (pulsed) 120 480 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD=120A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120A, VDD= 20 V, di/dt = 100 A/µs, Tj=25°C (see Figure 17) 70 150 4.2 ns nC A |
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