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STB270N4F3 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STB270N4F3
Description  N-channel 40 V - 2.1 m廓 - 160 A - TO-220 - D2PAK - I2PAK STripFET??Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB270N4F3 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB270N4F3 - STI270N4F3 - STP270N4F3
4/15
2
Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 250 µA, VGS= 0
40
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating
@125 °C
10
100
µA
µA
IGSS
Gate body leakage
current (VDS = 0)
VGS = ±20 V
±
200
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
24
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 80 A
TO-220
I²PAK
2.5
2.9
m
Ω
D²PAK
2.1
2.5
m
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward
transconductance
VDS =15 V, ID = 80 A
200
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz, VGS=0
7400
1800
47
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
gate-drain charge
VDD=20 V, ID = 160 A
VGS =10 V
(see Figure 14)
110
27
25
150
nC
nC
nC


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