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2SJ221-E Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SJ221-E Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SJ221 Rev.2.00 Sep 07, 2005 page 4 of 6 1.0 –40 0 40 80 120 160 Case Temperature Tc (°C) 0 0.2 0.4 0.6 0.8 Static Drain to Source on State Resistance vs. Case Temperature Pulse Test –10 V VGS = –4 V ID = –20 A –5 V, –10 A –20 A Forward Transfer Admittance vs. Drain Current Drain Current ID (A) 100 30 3 10 1 0.1 0.3 –0.1 –0.3 –1 –3 –10 –30 –100 Tc = 25°C 75°C VDS = –10 V Pulse Test –25°C Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time –0.1 –0.3 –1 –3 –10 –30 –100 5000 3000 1000 100 300 10 30 5 di / dt = 50 A / µs VGS = 0, Ta = 25°C 0 –10 –20 –30 –40 –50 Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 10000 3000 1000 300 100 30 10 Ciss Coss Crss VGS = 0 f = 1 MHz 0 0 Gate Charge Qg (nc) 0 –20 –16 –12 –8 –4 –100 –80 –60 –40 –20 Dynamic Input Characteristics 20 40 60 80 100 VDS VGS ID = –20 A 5000 1000 3000 300 30 100 10 5 –0.3 –1 –3 –10 –30 –100 –0.1 tf tr td(off) td(on) Drain Current ID (A) Switching Characteristics –5 V, –10 A VDD = –10 V –25 V –50 V VDD = –50 V –25 V –10 V VGS = –10 V, VDD = –30 V PW = 2 µs, duty ≤ 1 % |
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