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2SJ387S Datasheet(PDF) 3 Page - Renesas Technology Corp |
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2SJ387S Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 8 page 2SJ387(L), 2SJ387(S) Rev.2.00 Sep 07, 2005 page 3 of 7 Main Characteristics Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics –20 0 –4 –8 –12 –16 0–2 –4 –6 –8 –10 –10 0 –2 –4 –6 –8 0 –1–2–3–4 –5 40 0 10 20 30 0 50 100 150 200 VDS = –10 V Pulse Test –10 V –2.5 V –5 V –4V –2 V VGS = –1.5 V Pulse Test Drain to Source Voltage VDS (V) Maximum Safe Operation Area –30 –10 –3 –1 –0.1 –0.3 –0.5 –1 –2 –5 –10 –20 –50 –100 Ta = 25°C 10 µs 100 µs PW = 10 ms (1 shot) DC Operation (Tc = 25°C) 1 ms Operation in this area is limited by RDS (on) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –0.5 0 –0.1 –0.2 –0.3 –0.4 0 –2 –4 –6 –8 –10 Pulse Test ID = –5 A –1 A –2 A Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 0.2 0.1 0.02 0.05 0.01 –1 –10 –0.5 –2 –5 –20 –50 1 0.5 Pulse Test VGS = –2.5 V –4 V 25°C 75°C Tc = –25°C |
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